The magneto diode sensor contains two rectangular semiconductor wafers with a first type of hopping conduction - first (1) and second (2), perpendicular to each other, formed on a common third wafer (3) of the same semiconductor with a second type of hopping conduction. On the upper sides of the wafers (1 and 2) and at equal distances from each other there are consecutively three rectangular contacts in parallel, parallel to their long sides - first (4 and 5), second (6 and 7), and third (8 and 9), as all perpendicular to the long sides of the wafers (1 and 2). The contact (6) of the wafer (1) has a second type of hopping conduction, and the other contacts (4, 8, 5, 7 and 9) are ohmic to the wafers (1 and 2). The contact (6) of the wafer (1) is connected to one of terminals of a direct current source (10) so that it is connected in a straight direction relative to the wafer (1), and the contact (7) of the wafer (2) is connected to the other terminal of the direct current source (10). The contact (8) of the wafer (1) is connected to the contact (5) of the second wafer (2), and the contact (4) of the wafer (1) - to the contact (9) of the wafer (2). The contacts (4 and 8) of the wafer (1) are the differential output (11) of the sensor, as the measured magnetic field (12) lies in the planes of the wafers (1, 2 and 3) and is parallel to the long sides of the contacts (4, 5, 6, 7, 8 and 9).
