The Hall effect sensor with stabilized magnetic sensitivity contains a semiconductor wafer (1) of hopping conduction type, on the one side of which are formed a Hall effect sensor (2) and a diode element (3) located on the sensor (2) in its middle section. There is also a current source (4) and an operational amplifier (5) with a controllable amplification factor. The terminals of the current source (4) are connected to the power contacts (6 and 7) of the sensor (2) and to those of the operational amplifier (5). The diode element (3) is connected in a straight line to the current source (4) and is in current generator mode. The two output (Hall) contacts (8 and 9) of the sensor (2) are connected to the input of the amplifier (5), and to the second, its control input is connected the output (10) of the diode element (3). The measured magnetic field (11) is perpendicular to the active surface of the wafer (1), as the output (12) of the amplifier (5) is the output of the Hall effect sensor with stabilized magnetic sensitivity.
