The integrated two-axis magnetic field sensor comprises a semiconductor wafer (1) with p-type hopping conduction, on the one side of which two identical structures of the same semiconductor are formed, but of n-type hopping conduction and in the form of an equilateral cross, first (2) and second (3), parallel to each other. Each of the structures (2 and 3) contains one more central ohmic contact (4 and 5) with a square shape, as symmetrically to its four sides there is one external rectangular ohmic contact - clockwise respectively first (6 and 7), second (8 and (9), third (10 and 11), and fourth (12 and 13). The contacts (4 and 5) are connected to the terminals of the current source (14). The contact (6) of the first structure (2) is connected to the contact (11) of the second structure (3), the contact (8) of the structure (2) is connected to the contact (13) of the second structure (3), the contact (10) of the structure (2) is connected to the contact (7) of the second structure (3) and the contact (12) of the structure (2) is connected to the contact (9) of the second structure (3). The measured magnetic field (15) lies in the plane of a wafer (1) and is of random orientation. The contacts (6 and 10) of the structure (2) are the differential output (16) for the one of orthogonal planar components of the magnetic field (15), and the contacts (9 and 13) of the structure (3) are the differential output (17) for the other orthogonal planar component of the magnetic field (15).
