The magnetic field sensor contains two identical rectangular semiconductor wafers with n-type hopping conduction - first (1) and second (2), perpendicular to each other, formed on a common third wafer (3) of the same p-type conductivity semiconductor. On the upper sides of the wafers (1 and 2) and at distances from each other there are consecutively four rectangular ohmic contacts, parallel to their long sides - first (4 and 5), second (6 and 7), third (8 and 9), and fourth (10 and 11), as the all of which are perpendicular to the long sides of the wafers (1 and 2). The fourth contact (10) of the wafer (1) is connected to the first contact (5) of the second wafer (2) and to one of terminals of a current source (12). The second contact (6) of the wafer (1) is connected to the third contact (9) of the wafer (2) and to the other terminal of the current source (12). The third contact (8) of the wafer (1) is connected to the fourth contact (11) of the second wafer (2), and the contact (4) of the wafer (1) is connected to the contact (7) of the second wafer (2). The contacts (4 and 8) of the wafer (1) are an output (13) of the sensor, as the measured magnetic field (14) lies in the planes of the wafers (1, 2 and 3), and has an arbitrary orientation to the contacts (4, 5, 6, 7, 8, 9, 10 and 11).
