The magnetoresistive semiconductor sensor contains two semiconductor wafers of hopping conduction type - first (1) and second (2). On the one side of the wafer (1) are formed sequentially and at equal distances from each other three rectangular ohmic contacts, parallel to their long sides - the first (3), second (4) and third (5). On the one side of the wafer (2) there is a central rectangular base contact (6), and parallel to its long sides and symmetrically thereon are located a rectangular collector (7 and 8), and a rectangular emitter - the first (9) and second (10). The contact (3) of the wafer (1) is cross-connected to the emitter (10) of the wafer (2), and the contact (5) is cross-connected to the emitter (9). The contact (4) of the substrate (1) through the first current source (11) is connected to the contact (6) so that the emitters (9 and 10) are included in the right direction. The collectors (7 and 8) through load resistors (12 and 13) and a second current source (14) are connected in the opposite direction to the contact (6). The measured magnetic field (15) is applied in parallel to the long sides of the contacts (3, 4 and 5), the emitters (9 and 10), the collectors (7 and 8) and the contact (6), as the collectors (7 and 8) are the output (16) of the sensor.
